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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCR8DSM/D Silicon Controlled Rectifiers Reverse Blocking Thyristors * Small Size * Passivated Die for Reliability and Uniformity * Low Level Triggering and Holding Characteristics * Available in Two Package Styles Surface Mount Lead Form -- Case 369A Miniature Plastic Package -- Straight Leads -- Case 369 ORDERING INFORMATION * To Obtain "DPAK" in Surface Mount Leadform (Case 369A) Shipped in 16 mm Tape and Reel -- Add "T4" Suffix to Device Number, i.e. MCR8DSNT4 * To Obtain "DPAK" in Straight Lead Version (Case 369) Shipped in Sleeves -- Add "-1" Suffix to Device Number, i.e. MCR8DSN-1 MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Peak Repetitive Off-State Voltage (1) Peak Repetitive Reverse Voltage (TJ = -40 to 110C, RGK = 1.0 KW) On-State RMS Current (All Conduction Angles; TC = 90C) Average On-State Current (All Conduction Angles; TC = 90C) Peak Non-Repetitive Surge Current (One Half Cycle, 60 Hz, TJ = 110C) Circuit Fusing Consideration (t = 8.3 msec) Peak Gate Power (Pulse Width 10 msec, TC = 90C) Average Gate Power (t = 8.3 msec, TC = 90C) Peak Gate Current (Pulse Width 10 msec, TC = 90C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM VRRM MCR8DSM MCR8DSN IT(RMS) G A MCR8DSM MCR8DSN Motorola Preferred Devices Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. SCRs 8.0 AMPERES RMS 600 thru 800 VOLTS A K K A G CASE 369A-13 STYLE 4 Value Unit Volts 600 800 Amps 8.0 IT(AV) ITSM 90 I2t PGM 5.0 PG(AV) 0.5 IGM TJ Tstg 2.0 -40 to 110 -40 to 150 Amps C 34 A2sec Watts 5.1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance -- Junction to Case Thermal Resistance -- Junction to Ambient Thermal Resistance -- Junction to Ambient (2) Maximum Lead Temperature for Soldering Purposes (3) Symbol RqJC RqJA RqJA TL Max 2.2 88 80 260 Unit C/W C (1) VDRM for all types can be applied on a continuous basis. Ratings apply for negative gate voltage or RGK = 1.0 KW; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the device are exceeded. (2) Surface mounted on minimum recommended pad size. (3) 1/8 from case for 10 seconds. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Thyristor Device Data (c) Motorola, Inc. 1999 1 MCR8DSM MCR8DSN ELECTRICAL CHARACTERISTICS (TJ = 25C; RGK = 1.0 KW unless otherwise noted) Characteristics Peak Reverse Gate Blocking Voltage (IGR = 10 mA) Peak Forward Blocking Current Peak Reverse Blocking Current (VAK = Rated VDRM or VRRM) (1) Peak Reverse Gate Blocking Current (VGR = 10 V) Peak On-State Voltage (2) (ITM = 16 A) Gate Trigger Current (Continuous dc) (3) (VD = 12 V, RL = 100 W, TJ = 25C) (VD = 12 V, RL = 100 W, TJ = -40C) Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W, TJ = 25C) (VD = 12 V, RL = 100 W, TJ = -40C) (VD = 12 V, RL = 100 W, TJ = 110C) Holding Current (VD = 12 V, I(init) = 200 mA, TJ = 25C) (VD = 12 V, I(init) = 200 mA, TJ = -40C) Latching Current (VD = 12 V, IG = 2.0 mA, TJ = 25C) (VD = 12 V, IG = 2.0 mA, TJ = -40C) Symbol VGRM 10 IDRM IRRM TJ = 25C TJ = 110C IRGM -- VTM -- IGT 5.0 -- VGT 0.45 -- 0.2 IH 0.5 -- IL 0.5 -- 1.0 -- 6.0 10 1.0 -- 6.0 10 mA 0.65 -- -- 1.0 1.5 -- mA 12 -- 200 300 1.4 1.8 -- 1.2 -- -- -- -- 10 500 12.5 18 Min Typ Max Unit Volts mA mA Volts mA Volts DYNAMIC CHARACTERISTICS Characteristics Total Turn-On Time (Source Voltage = 12 V, RS = 6.0 KW, IT = 16 A(pk), RGK = 1.0 KW) (VD = Rated VDRM, Rise Time = 20 ns, Pulse Width = 10 ms) Critical Rate of Rise of Off-State Voltage (VD = 0.67 X Rated VDRM, Exponential Waveform, RGK = 1.0 KW, TJ = 110C) Symbol tgt -- dv/dt 2.0 10 -- 2.0 5.0 Min Typ Max Unit ms V/ms (1) Ratings apply for negative gate voltage or RGK = 1.0 KW. Devices shall not have a positive gate voltage concurrently with a negative voltage on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage applied exceeds the rated blocking voltage. (2) Pulse Test; Pulse Width 2.0 msec, Duty Cycle 2%. (3) Does not include RGK current. 2 Motorola Thyristor Device Data MCR8DSM MCR8DSN TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( C) P(AV) , AVERAGE POWER DISSIPATION (WATTS) 110 12 10 8.0 6.0 4.0 2.0 0 0 1.0 2.0 3.0 4.0 5.0 6.0 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) 105 100 a = Conduction Angle dc a a = Conduction Angle a 180 90 60 120 dc 95 a = 30 90 a = 30 85 0 1.0 2.0 60 3.0 90 4.0 120 5.0 180 6.0 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) Figure 1. Average Current Derating Figure 2. On-State Power Dissipation I T, INSTANTANEOUS ON-STATE CURRENT (AMPS) 100 MAXIMUM @ TJ = 110C 10 r(t) , TRANSIENT THERMAL RESISTANCE (NORMALIZED) TYPICAL @ TJ = 25C 1.0 0.1 ZqJC(t) = RqJC(t)Sr(t) MAXIMUM @ TJ = 25C 1.0 0.1 0 1.0 2.0 3.0 4.0 5.0 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) 0.01 0.1 1.0 10 100 1000 10 K t, TIME (ms) Figure 3. On-State Characteristics Figure 4. Transient Thermal Response 1000 VGT, GATE TRIGGER VOLTAGE (VOLTS) I GT, GATE TRIGGER CURRENT (m A) 1.0 RGK = 1.0 KW 100 10 GATE OPEN 1.0 -40 -25 0.1 -10 5.0 20 35 50 65 80 95 110 -40 -25 -10 5.0 20 35 50 65 80 95 110 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Figure 5. Typical Gate Trigger Current versus Junction Temperature Figure 6. Typical Gate Trigger Voltage versus Junction Temperature Motorola Thyristor Device Data 3 MCR8DSM MCR8DSN 10 RGK = 1.0 KW IH , HOLDING CURRENT (mA) IL, LATCHING CURRENT (mA) 10 RGK = 1.0 KW 1.0 1.0 0.1 -40 -25 -10 5.0 20 35 50 65 80 95 110 0.1 -40 -25 -10 5.0 20 35 50 65 80 95 110 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Figure 7. Typical Holding Current versus Junction Temperature Figure 8. Typical Latching Current versus Junction Temperature 10 TJ = 25C IH, HOLDING CURRENT (mA) 8.0 1000 STATIC dv/dt (V/m s) 100 70C 90C TJ = 110C 6.0 IGT = 25 mA 4.0 IGT = 10 mA 10 2.0 0 100 1.0 1000 RGK, GATE-CATHODE RESISTANCE (OHMS) 10 K 100 RGK, GATE-CATHODE RESISTANCE (OHMS) 1000 Figure 9. Holding Current versus Gate-Cathode Resistance Figure 10. Exponential Static dv/dt versus Gate-Cathode Resistance and Junction Temperature 1000 1000 TJ = 110C 400 V STATIC dv/dt (V/ ms) STATIC dv/dt (V/ ms) 100 VD = 800 V TJ = 110C 100 IGT = 25 mA IGT = 10 mA 10 600 V VPK = 800 V 10 1.0 100 RGK, GATE-CATHODE RESISTANCE (OHMS) 1000 1.0 100 RGK, GATE-CATHODE RESISTANCE (OHMS) 1000 Figure 11. Exponential Static dv/dt versus Gate-Cathode Resistance and Peak Voltage Figure 12. Exponential Static dv/dt versus Gate-Cathode Resistance and Gate Trigger Current Sensitivity 4 Motorola Thyristor Device Data MCR8DSM MCR8DSN PACKAGE DIMENSIONS -T- B V R 4 SEATING PLANE C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.175 0.215 0.020 0.050 0.020 --- 0.030 0.050 0.138 --- MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.45 5.46 0.51 1.27 0.51 --- 0.77 1.27 3.51 --- S 1 2 3 A K F L D G 2 PL Z U J H 0.13 (0.005) T DIM A B C D E F G H J K L R S U V Z M STYLE 4: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE CASE 369A-13 ISSUE Y Motorola Thyristor Device Data 5 MCR8DSM MCR8DSN Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 Customer Focus Center: 1-800-521-6274 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 1-602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, Motorola Fax Back System - US & Canada ONLY 1-800-774-1848 2, Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. - http://sps.motorola.com/mfax/ 852-26629298 HOME PAGE: http://motorola.com/sps/ JAPAN: Motorola Japan Ltd.; SPD, Strategic Planning Office, 141, 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan. 81-3-5487-8488 6 Motorola Thyristor Device Data MCR8DSM/D |
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